| 金-锗系统欧姆接触制备研究 |
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| 引用本文： | 杨梦丽,张红欣,于信明. 金-锗系统欧姆接触制备研究[J]. 微纳电子技术, 2001, 38(4): 32-34 |
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| 作者姓名： | 杨梦丽 张红欣 于信明 |
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| 作者单位： | 河北半导体所,河北,石家庄,050051 |
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| 摘 要： | 对于 Ga As MESFET和以 Ga As或 In P为衬底的 PHEMT的欧姆接触制备 ,虽均采用 Au-Ge- Ni系统 ,但其合金条件却因材料特性各异而不同。
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| 关 键 词： | MESFET PHEMT 欧姆接触 合金条件 |
| 文章编号： | 1001-5507(2001)04-0032-03 |
| 修稿时间： | 2001-03-20 |
Fabrication of Au-Ge ohmic contact |
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| YANG Meng-li,ZHANG Hong-xin,YU Xin-ming. Fabrication of Au-Ge ohmic contact[J]. Micronanoelectronic Technology, 2001, 38(4): 32-34 |
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| Authors: | YANG Meng-li ZHANG Hong-xin YU Xin-ming |
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| Abstract: | MESFET on GaAs substrate and PHEMT on GaAs or InP substrate use the same Au-Ge-Ni alloy system in fabrication of ohmic contact,but the alloying conditions are different according to their materials characteristic.The best alloying condition including temperature and time was obtained by experiment with reasonable redundancy for MESFET and PHEMT. |
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| Keywords: | MESFET PHEMT ohmic contact alloying condition |
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