多切削刃金刚石颗粒烧结试验研究

为提高金刚石工具的锋利度和加工效率，延长其使用寿命，采用低温烧结的方法对金刚石颗粒表面进行多刃化处理。使用扫描电镜照片和质量损失率对不同烧结工艺的金刚石颗粒多刃化效果进行表征，并进行了碳化硅晶片研磨试验。结果表明:金刚石颗粒多刃化处理的最佳烧结工艺为:烧结温度750 ℃，烧结时间480 min，期间通10 kPa氧气2次，每次通气2 min，通气间隔2 h。在此条件下可获得大小适中，凹坑分布均匀的多刃化金刚石颗粒表面。碳化硅晶片研磨试验证明:多刃化金刚石颗粒与常规金刚石颗粒相比，材料去除率可提高1.1倍，研磨后晶片表面粗糙度R_a约为常规金刚石颗粒的24%，多刃化处理可显著提高金刚石颗粒研磨碳化硅晶片的抛光效率和精度。 

Experimental study on sintering of diamond particles with multiple cutting edges

In order to improve the sharpness and machining efficiency of diamond tools and prolong the service life, the surface of diamond particles was processed by low-temperature sintering. The multi-edged diamond particles with different sintering processes were observed and quantitatively analyzed by SEM and mass loss rate. The results show that the best sintering process for the multi-blade treatment of diamond particle is as follows: sintering temperature of 750 ℃, 480 min, oxygenation pumped twice during the sintering process, each time 10 kPa, ventilation 2 min with interval of 2 h. Under this condition, multi-edged diamond particles are processed, and the surface of multi-edged diamond particles with moderate size and uniform pit distribution can be obtained. The grinding experiment on silicon carbide wafer shows that the material removal rate of multi-blade diamond particle is about 1.1 times higher than that of conventional diamond particles. The roughness R_a of the wafer after grinding is about 24% of that of conventional diamond particle, which significantly improves the grinding and polishing efficiency and precision of silicon carbide wafer.