Influence of Bi2O3/TiO2, Sb2O3 and Cr2O3 doping on low-voltage varistor ceramics |
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| Affiliation: | 1. Center for Nanomaterials, International Advanced Research Center for Powder Metallurgy & New Materials (ARCI), Balapur PO, Hyderabad, 500005, A.P, India;2. Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Powai, Mumbai, 400076, India;1. Department of Metallurgy and Materials Engineering, Indian Institute of Engineering Science and Technology, Shibpur, Howrah, 711103, West Bengal, India;2. Variable Energy Cyclotron Centre, 1/AF Bidhan Nagar, Kolkata, 700064, West Bengal, India;3. Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400094, India;1. State Key Laboratory of Disaster Prevention & Reduction for Power Grid Transmission and Distribution Equipment, State Grid Hunan Electric Power Company Disaster Prevention and Reduction Center, Changsha 410129, China;2. College of Materials Science and Engineering, Hunan University, Changsha 410082, China |
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| Abstract: | The influence of the amount of Bi2O3 and TiO2 additions at a TiO2/Bi2O3 ratio of 1, as well as Sb2O3 and/or Cr2O3 doping, on the microstructural development and electrical properties of varistor ceramics in the ZnO–Bi2O3–TiO2–Co3O4–Mn2O3 system was investigated. In samples with a low level of Bi2O3 and TiO2 (0·3 mol%) and therefore small amount of liquid phase, exaggerated growth of the ZnO grains results in high microstructural inhomogeneity. Co-doping with Sb2O3 significantly changes the phase composition of TiO2 doped low-voltage varistor ceramics. The Bi3Zn2Sb3O11 type pyrochlore phase forms at the expense of the γ-Bi2O3 and Bi4Ti3O12 phases and decreases the amount of liquid phase in the early stages of sintering. Already small amounts of Sb2O3 and/or Cr2O3 added to a TiO2 doped low-voltage varistor ceramics limit ZnO grain growth and increase the threshold voltage VT of the samples. |
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