Very low surface recombination velocity of crystalline silicon passivated by phosphorus‐doped a‐SicxNy:H(n) alloys

Hydrogenated and phosphorus‐doped amorphous silicon carbonitride films (a‐SiC_xN_y:H(n)) were deposited by plasma‐enhanced chemical vapor deposition (PECVD) on crystalline silicon surface in order to explore surface passivation properties. Very silicon‐rich films yielded effective surface recombination velocities at 1 sun‐illumination as low as 3 cm s⁻¹ and 2 cm s⁻¹ on 1 Ω cm p‐ and n‐type crystalline silicon substrates, respectively. In order to use them as anti‐reflection coating, we increased alternatively either the carbon or nitrogen content of these films. Also, a combination of passivation and antireflective films was analyzed. Finally, we explored the passivation stability under high‐temperature steps. Copyright © 2007 John Wiley & Sons, Ltd.