Influence of Frequency and Bias Current on Asymmetrical GMI Effect in Co718Fe49Nb08Si75B15 Amorphous GlassCovered Wires

 The Co718Fe49Nb08Si75B15 amorphous glass covered wires (AGCW) are prepared by the Taylor Ulitovsky technique. The frequency dependence of asymmetrical giant magneto impedance (AGMI) effect in amorphous glass covered wires annealed by 70 mA DC current is here presented. The resistance R and the reactance X have been measured, respectively. The real part R and the imaginary part X of impedance play an important role at high frequency and low frequency, respectively. The influence of DC bias current from Ib=0 mA to Ib=5 mA at 30 MHz on the GMI effect in the glass covered wires annealed by 70 mA DC current is investigated. The asymmetry becomes the largest around Ib=1 mA, and finally decreases for the larger bias current Ib=5 mA. The maximum ΔZ/Z ratio of 310% is observed at 58 MHz under 1 mA bias current.

Influence of Frequency and Bias Current on Asymmetrical GMI Effect in Co718Fe49Nb08Si75B15 Amorphous Glass Covered Wires

The Co718Fe49Nb08Si75B15 amorphous glass covered wires (AGCW) are prepared by the Taylor Ulitovsky technique. The frequency dependence of asymmetrical giant magneto impedance (AGMI) effect in amorphous glass covered wires annealed by 70 mA DC current is here presented. The resistance R and the reactance X have been measured, respectively. The real part R and the imaginary part X of impedance play an important role at high frequency and low frequency, respectively. The influence of DC bias current from Ib=0 mA to Ib=5 mA at 30 MHz on the GMI effect in the glass covered wires annealed by 70 mA DC current is investigated. The asymmetry becomes the largest around Ib=1 mA, and finally decreases for the larger bias current Ib=5 mA. The maximum ΔZ/Z ratio of 310% is observed at 58 MHz under 1 mA bias current.