Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications |
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| Authors: | Ashley T. Buckle L. Datta S. Emeny M.T. Hayes D.G. Hilton K.P. Jefferies R. Martin T. Phillips T.J. Wallis D.J. Wilding P.J. Chau R. |
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| Affiliation: | QinetiQ, Malvern; |
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| Abstract: | The heterogeneous integration of InSb quantum well transistors onto silicon substrates is investigated for the first time. 85 nm gate length FETs with fT = 305 GHz at Vds = 0.5 V and DC performance suitable for digital logic are demonstrated on material with a buffer just 1.8 mum thick. An initial step towards integrating InSb FETs with mainstream Si CMOS for high-speed energy-efficient logic applications has been achieved. |
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