| Affiliation: | Xiaolei Su1),Jie Xu1),Zhimin Li2),Junbo Wang1),Xinhai He1),Chong Fu1) and Wancheng Zhou3) 1) College of Mechanical & Electronic Engineering,Xi an Polytechnic University,Xi an 710048,China 2) School of Technical Physics,Xidian University,Xi an 710071,China 3) State Key Laboratory of Solidification Processing,Northwestern Polytechnical University,Xi an 710072,China |
| Abstract: | The SiC powders by Al or N doping have been synthesized by combustion synthesis, using Al powder and NH4Cl powder as the dopants and polytetra?uoroethylene as the chemical activator. Characterization by X-ray diffraction, Raman spectrometer, scanning electron microscopy and energy dispersive spectrometer demonstrates the formation of Al doped SiC, N doped SiC and the Al and N co-doped SiC solid solution powders, respectively. The electric permittivities of prepared powders have been determined in the frequency range of 8.2–12.4 GHz. It indicates that the electric permittivities of the prepared SiC powders have been improved by the pure Al or N doping and decrease by the Al and N co-doping. The paper presents a method to adjust dielectric property of SiC powders in the GHz range. |
