Reduction of floating substrate effect in thin-film SOI MOSFETs |
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Authors: | Colinge J.-P. |
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Affiliation: | Hewlett-Packard Laboratories, Palo Alto, USA; |
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Abstract: | The presence of a floating substrate in SOI transistors gives rise to a decrease of threshold voltage when drain voltage is increased. When the devices are made in a very thin silicon film, the latter is completely depleted when the device is in the 'on' state, and no part of the film can act as a floating substrate. This brings about a dramatic decrease of the so-called 'kink effect'. |
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