| AlGaN/GaN HEMT栅槽低损伤刻蚀技术 |
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| 引用本文： | 黄俊,魏珂,刘新宇.AlGaN/GaN HEMT栅槽低损伤刻蚀技术[J].功能材料与器件学报,2009,15(2). |
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| 作者姓名： | 黄俊 魏珂 刘新宇 |
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| 作者单位： | 中国科学院微电子研究所,北京,100029 |
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| 基金项目： | 国家重点基础研究发展规划(973计划)，中国科学院重点创新项目 |
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| 摘 要： | 对AlGaN/GaN HEMT栅槽低损伤刻蚀技术进行研究,通过加入小流量的具有钝化缓冲作用的C2H4,对Cl2/Ar/C2H4的工艺条件进行了优化,有效地降低了栅槽刻蚀造成的AlGaN表面损伤和器件退化,同时防止反应生成物淀积在栅槽表面,改善了肖特基结特性,提高了栅极调控能力,实现凹栅槽的低损伤刻蚀.
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| 关 键 词： | 凹栅槽 低损伤刻蚀 |
Optimization on gate-recessed AlGaN/GaN HEMT with low damage etching technique |
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| HUANG Jun,WEI Ke,LIU Xin-yu.Optimization on gate-recessed AlGaN/GaN HEMT with low damage etching technique[J].Journal of Functional Materials and Devices,2009,15(2). |
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| Authors: | HUANG Jun WEI Ke LIU Xin-yu |
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| Affiliation: | Institute of Microelectronics;Chinese Academy of Sciences;Beijing l00029;China |
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| Abstract: | A systematic study of low damage etching recessed gate of AlGaN/GaN HEMT is performed adding a little flux of passivating gas C 2H 4 to the Cl 2/Ar inductively coupled plasma,and the Cl 2/Ar/C 2H 4 is optimized.The surface damage and degeneration of AlGaN are avoid and the etching resultant is removed from the surface of the recessed gate.The Schottky characteristics and gate control ability are improved and the low damage etching recessed gate technique is achieved. |
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| Keywords: | AIGaN/GaN HEMT C2H4 |
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