High-Operating-Temperature MWIR Detector Diodes |
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Authors: | H.F. Schaake M.A. Kinch D. Chandra F. Aqariden P.K. Liao D.F. Weirauch C.-F. Wan R.E. Scritchfield W.W. Sullivan J.T. Teherani H.D. Shih |
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Affiliation: | (1) Infrared Technologies Division, DRS Sensors & Targeting Systems, Inc, P.O. Box 740188, Dallas, TX 75374, USA |
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Abstract: | The high-operating-temperature (HOT) midwave infrared (MWIR) n-on-p detector has been pursued using the high-density vertically integrated photodiode (HDVIP®) architecture. In this device, arsenic-doped HgCdTe grown by liquid-phase epitaxy (LPE) is used, passivated on both surfaces with interdiffused CdTe. Dark current densities on these diodes as low as 2.5 mA/cm2 normalized to a 5 μm cutoff at 250 K have been demonstrated. 1/f noise at 1 Hz, measured at 250 K, is found to be 6 × 10?11 A/rHz-cm measured on a cutoff of 4.43 μm. These results agree with the theoretical predictions for the devices made. |
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Keywords: | HgCdTe high-operating-temperature photodiodes arsenic-doped HgCdTe |
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