Effect of Ga incorporation in sequentially prepared CuInS2 thin film absorbers |
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| Authors: | A. Neisser, I. Hengel, R. Klenk, Th. W. Matthes, J. lvarez-Garcí a, A. P rez-Rodrí guez, A. Romano-Rodrí guez,M. -Ch. Lux-Steiner |
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| Affiliation: | A. Neisser, I. Hengel, R. Klenk, Th. W. Matthes, J. Álvarez-García, A. Pérez-Rodríguez, A. Romano-Rodríguez,M. -Ch. Lux-Steiner |
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| Abstract: | Thin film CuInS2:Ga solar cell absorber films were prepared by sequential evaporation of Cu–In–Ga precursors and sulfurization in sulfur vapor. The depth distribution of Ga was found to be highly inhomogeneous caused by CuGaS2 phase segregation at the back contact. Depending on overall Ga content and sulfurization temperature a quaternary CuGaxIn1−xS2 compound formed exhibiting a shift in absorber lattice constant and band gap. Micro Raman measurements showed that crystal quality was also affected by Ga. Open-circuit voltages well above 800 mV were achieved while sustaining high fill factors of 71%. |
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| Keywords: | CuInS2 Ga Thin films Raman |
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