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基于GST薄膜的弯曲波导相变光学器件光学仿真与分析
引用本文:罗明馨,张东亮,鹿利单,祝连庆. 基于GST薄膜的弯曲波导相变光学器件光学仿真与分析[J]. 半导体光电, 2024, 45(2): 228-233
作者姓名:罗明馨  张东亮  鹿利单  祝连庆
作者单位:光电测试技术及仪器教育部重点实验室;光纤传感与系统北京实验室, 北京100016;光电测试技术及仪器教育部重点实验室;广州南沙北科光子感知技术研究院, 广州 511462;光电测试技术及仪器教育部重点实验室;光纤传感与系统北京实验室, 北京100016;广州南沙北科光子感知技术研究院, 广州 511462
基金项目:北京学者计划研究项目(BJXZ2021-012-00046);国家自然科学基金项目(62105039);中国科协青年托举人才工程项目(YESS20200146);北京信息科技大学研究项目(2022XJJ07).通信作者:张东亮
摘    要:研究了相变光学器件的光传输性能,使用时域有限差分法建立覆盖Ge2Sb2Te5(GST)薄膜的弯曲波导模型,得到了在晶态和非晶态两种情况下GST的面积、厚度和在弯曲波导中的位置对光传输效率及损耗的影响规律。结果表明:GST的最优覆盖面积为0.415μm2,厚度为17 nm,器件光传输不受GST覆盖位置影响,光传输对比度最佳达到90.8%,插入损耗低至0.321 dB,在1 500~1 670 nm波长范围内能够实现宽光谱并行传输。该器件尺寸小,消光比大,理论上满足提高光计算准确率的需求。研究结果对于非易失性、并行集成光子矩阵计算单元器件的研制具有一定的参考意义。

关 键 词:光子计算  相变光学器件  Ge2Sb2Te2  弯曲波导  覆盖型
收稿时间:2023-12-04

Optical Simulation and Analysis of Curved-Waveguide Phase-Change Optical Devices Based on GST Thin Film
LUO Mingxin,ZHANG Dongliang,LU Lidan,ZHU Lianqing. Optical Simulation and Analysis of Curved-Waveguide Phase-Change Optical Devices Based on GST Thin Film[J]. Semiconductor Optoelectronics, 2024, 45(2): 228-233
Authors:LUO Mingxin  ZHANG Dongliang  LU Lidan  ZHU Lianqing
Affiliation:Key Lab Minist Educ Optoelect Measurement Technol;Beijing Lab Opt Fiber Sensing & Syst, Beijing Information Sci & Technol Univ., Beijing 100016, CHN;Key Lab Minist Educ Optoelect Measurement Technol;Guangzhou Nansha Intelligent Photonic Sensing Research Institute, Guangzhou 511462, CHN; Key Lab Minist Educ Optoelect Measurement Technol;Beijing Lab Opt Fiber Sensing & Syst, Beijing Information Sci & Technol Univ., Beijing 100016, CHN;Guangzhou Nansha Intelligent Photonic Sensing Research Institute, Guangzhou 511462, CHN
Abstract:This article discusses the optical transmission performances of phase-change optical devices. A bending waveguide model covering Ge2Sb2Te2 (GST) thin films was established using the finite difference time domain method. The influences of the GST area, thickness, and position in the bending waveguide on the optical transmission efficiency and loss were obtained in both the crystalline and amorphous states. The results indicated that when the optimal coverage area of the GST was 0.415μm2, and the thickness was 17nm, the optical transmission of the device was not affected by the GST position. The maximum contrast of the optical transmission reached 90.8%, and the insertion loss was as low as 0.321dB. Broadband parallel transmission could be achieved in a wavelength range of 1500~1670nm. The device had a small size and high extinction ratio, which theoretically met the requirement for enhancing the accuracy of optical calculations. This study is significant in the development of non-volatile, parallel integrated photon matrix computing unit devices.
Keywords:photon computing   phase change optical devices   Ge2Sb2Te2   curved waveguides   covering type
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