电离效应对EBCMOS中电子倍增层增益的影响研究

采用蒙特卡罗模拟方法研究了电子轰击互补金属氧化物半导体(EBCMOS)成像器件中高能电子轰击半导体时产生的电离效应对电荷收集效率和电子倍增层增益的影响。分析了入射电子能量、p型衬底层掺杂浓度、电子倍增层和钝化层厚度对电荷收集效率和增益的影响。结果表明，增加入射电子能量(小于4 keV)、减小电子倍增层和钝化层厚度、降低掺杂浓度等是提高电荷收集效率和电子倍增层增益的有利途径，可为获得高增益的EBCMOS器件提供理论支撑。

Influence of Ionization Effect on Gain of Electron Multiplying Layer in EBCMOS

The Monte Carlo simulation method was employed to investigate the influence of ionization effects resulting from high-energy electrons bombarding a semiconductor in electron bombardment complementary metal-oxide-semiconductor (EBCMOS) imaging devices on both the charge collection efficiency and gain of the electron multiplying layer. Further, a theoretical analysis was conducted to examine the effects of incident electron energy, doping concentration in the p-type substrate layer, thickness of the electron multiplying layer, and passivation layer on the charge collection efficiency and gain of the multiplying layer. The analysis revealed that increasing the incident electron energy (up to 4keV), reducing the thickness of both the electron multiplying and passivation layers, and lowering the doping concentration in the p-type substrate layer are all beneficial approaches to improve the charge collection efficiency and increase the multiplying layer gain to obtain high-gain EBCMOS devices.