Photoluminescence from germanium quantum wells and quantum dots in silicon grown by MBE at low temperature |
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| Authors: | Burbaev T M Kurbatov V A Pogosov A O Rzaev M M Sibel’din N N |
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| Affiliation: | (1) Lebedev Physical Institute, Russian Academy of Sciences, Leninskii pr. 53, Moscow, 119991, Russia |
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| Abstract: | Semiconductors - The low-temperature (T=2 K) photoluminescence (PL) has been studied in Si/Ge structures grown by MBE at a low (250–350°C) temperature of Ge deposition. The luminescence... |
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