Influence of gate-to-source and gate-to-drain recesses on GaAs camel-like gate field-effect transistors |
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Authors: | Jung-Hui Tsai You-Ren Wu Chung-Cheng Chiang Fu-Min Wang Wen-Chau Liu |
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Affiliation: | 1. Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung, 116, Taiwan 2. Department of Electrical Engineering, National Cheng Kung University, Tainan, 701, Taiwan
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Abstract: | In this article, the characteristics of the GaAs homojunction camel-like gate field-effect transistors with and without the gate-to-source and gate-to-drain recesses structures are first investigated and compared. As to the device without the recesses structure, a second channel within the n +-GaAs cap layer is formed at large gate bias, which could enhance the drain output current and transconductance. Furthermore, a two-stage relationship between drain current (and transconductance) versus gate voltage is observed in the recesses structure. The simulated results exhibit a maximum drain saturation current of 447 (351 mA/mm) and a maximum transconductance of 525 (148 mS/mm) in the studied device without (with) the recesses structure. Consequentially, the demonstration and comparison of the variable structures provide a promise for design in circuit applications. |
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