High-power AlGaInN LED chips with two-level metallization |
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Authors: | D A Zakheim G V Itkinson M V Kukushkin L K Markov O V Osipov A S Pavlyuchenko I P Smirnova A E Chernyakov D A Bauman |
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Affiliation: | 1. Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia 2. NTL Innovation Center OOO, St. Petersburg, 194223, Russia 3. Microelectronics R & D Center, Russian Academy of Sciences, St. Petersburg, 194021, Russia 4. Svetlana Optoelectronics ZAO, St. Petersburg, 194156, Russia
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Abstract: | A high-power AlGaInN light-emitting flip-chip crystal with a new configuration of contact pads is developed and fabricated. The implementation of a two-level metallization scheme with a dielectric insulating interlayer significantly improves the active-to-total area ratio of the heterostructure (to 78%). Numerical simulation of the current spread, employed when developing the chip topology, makes it possible to achieve high uniformity of the current distribution over the active-region area and to obtain small values of the differential resistance of the chip (0.3 Ω). Light-emitting diodes with the maximum external quantum efficiency (60%) and output optical power (542 mW) at a working pump current of 350 mA are fabricated on the basis of crystals developed in the study. |
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