Preparation of grass-like GaN nanostructures: Its PL and excellent field emission properties |
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| Authors: | Ghulam NabiChuanbao Cao Waheed S KhanSajad Hussain Zahid UsmanNoor Abass Din Khattak Zulfiqar AliFaheem K Butt Sajjad Hussain ShahMuhammad Safdar |
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| Affiliation: | a Research Centre of Materials Science, School of Material Science and Engineering, Beijing Institute of Technology, Beijing 100081, People's Republic of Chinab Physics Department, Gomal University, D.I.Khan, Khyber-Pakhtunkhwa, Pakistanc Department of Physics, School of Science, BIT, Beijing 100081, People's Republic of China |
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| Abstract: | We here report highly pure and single crystalline grass-like gallium nitride (GaN) nanostructures obtained on silicon substrate via catalyst-assisted CVD route under NH3 atmosphere inside horizontal tube furnace (HTF) by pre-treating the precursors with aqueous NH3. The as-obtained GaN nanostructures were characterized by XRD, SEM, EDS, HRTEM and SAED. The field emission (FE) characteristics of grass-like GaN nanostructures exhibited a turn-on field of 7.82 V μm− 1 and a threshold field of 8.96 V μm− 1 which are quite reasonable for applications in electron emission devices, field emission displays and vacuum microelectronic devices. Room temperature photoluminescence (PL) measurements of grass-like GaN nanostructures exhibited a strong near-band-edge emission at 368.8 nm (3.36 eV) without any defects related emissions which shows its potential applications in optoelectronics. |
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| Keywords: | Grass-like GaN Semiconductors Chemical vapor deposition Field emission properties |
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