DC conductivity of metal/DLC/Si/metal heterostructures |
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| Authors: | Dluzniewski M. Staryga E. Bak G.W. |
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| Affiliation: | Inst. of Phys., Tech. Univ. Lodz; |
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| Abstract: | Electrical conduction of metal/DLC/silicon/metal heterostructures has been investigated, Both DLC/p-Si and DLC/n-Si systems shows rectifying properties. The current-voltage (I-V) characteristics of the heterostructures can be described well by the simplified diode equation with the ideality factor between 21.2 and 3.25, decreasing with increasing temperature. The directive tendency of I-V characteristics is independent of the type of silicon substrate. A simple qualitative band model of DLC/Si junction is proposed |
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