1677 V, 5.7 m/spl Omega//spl middot/cm/sup 2/ 4H-SiC BJTs |
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| Authors: | Jianhui Zhang Alexandrov P Zhao JH Burke T |
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| Affiliation: | Electr. & Comput. Eng. Dept., State Univ. of New Jersey, Piscataway, NJ, USA; |
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| Abstract: | This letter reports the development of a high-performance power 4H-SiC bipolar junction transistor (BJT) with, simultaneously, a high blocking voltage and a low specific on-resistance (R/spl I.bar//sub ON/). A single BJT cell with an active area of 0.61 mm/sup 2/ achieves an open base collector-to-emitter blocking voltage (V/sub ceo/) of 1677 V and conducts up to 3.2 A at a forward voltage drop of V/sub CE/=3.0 V, corresponding to a low R/spl I.bar//sub ON/ of 5.7 m/spl Omega//spl middot/cm/sup 2/ up to Jc=525 A/cm/sup 2/ and a record high value of V/sub B//sup 2//R/sub SP/spl I.bar/ON/ of 493 MW/cm/sup 2/. |
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