缺陷对多壁碳纳米管光致发光特性的影响

采用化学气相沉积法，在反应温度分别为980℃和1040℃时制备了多壁碳纳米管（MWNTs）样品，并采用扫描电镜和拉曼光谱对样品进行了表征；结果表明，当反应温度为9800C时，制备的碳纳米管结构缺陷更多。使用波长为350nm的光激发2种样品并测量它们的光致发光光谱。发射峰值约在550nm处，反应温度为980℃时制备的碳纳米管的发射光谱的光强较强。

Effect of Defects on Photoluminescence of Multiwalled Carbon Nanotube

Muhiwalled carbon nanotubes （MWNTs） were synthesized with chemical vapor deposition（CVD） at 980 ℃ and 1 040 ℃. MWNTs products were characterized with SEM and mi-cro-Raman spectrum. Experimental results show that an additional line due to defects on the outer surface of MWNTs at a reaction temperature 980 ℃. When wavelength of the excitation light was 350 nm, an emission band at about 550 nm was observed in the photoluminescence spectrum for two samples at room temperature. One of them synthesized by chemical vapor deposition at 980 ℃ is intensive.