Special features of the formation of Ge(Si) islands on the relaxed Si1?xGex/Si(001) buffer layers |
| |
Authors: | N V Vostokov Yu N Drozdov Z F Krasil’nik O A Kuznetsov D N Lobanov A V Novikov M V Shaleev |
| |
Affiliation: | (1) Institute of Microstructure Physics, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia;(2) Physicotechnical Research Institute at the Lobachevsky State University, Nizhni Novgorod, 603950, Russia |
| |
Abstract: | The results of studying the growth of self-assembled Ge(Si) islands on relaxed Si1?xGex/Si(001) buffer layers (x≈25%), with a low surface roughness are reported. It is shown that the growth of self-assembled islands on the buffer SiGe layers is qualitatively similar to the growth of islands on the Si (001) surface. It is found that a variation in the surface morphology (the transition from dome-to hut-shaped islands) in the case of island growth on the relaxed SiGe buffer layers occurs at a higher temperature than for the Ge(Si)/Si(001) islands. This effect can be caused by both a lesser mismatch between the crystal lattices of an island and the buffer layer and a somewhat higher surface density of islands, when they are grown on an SiGe buffer layer. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|