| 基于InP全增强HEMT逻辑的环形压控振荡器研究 |
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| 引用本文： | 杜睿,戴杨,陈燕凌,杨富华. 基于InP全增强HEMT逻辑的环形压控振荡器研究[J]. 半导体学报, 2009, 30(3): 035001-5 |
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| 作者姓名： | 杜睿 戴杨 陈燕凌 杨富华 |
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| 作者单位： | Research;Center;Semiconductor;Integration;Institute;Semiconductors;Chinese;Academy;Sciences; |
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| 摘 要： | A voltage-controlled ring oscillator （VCO） based on a full enhancement-mode InAlAs/InGaAs/InP high electron mobility transistor （HEMT） logic is proposed. An enhancement-mode HEMT （E-HEMT） is fabricated, whose threshold is demonstrated to be 10 mV. The model of the E-HEMT is established and used in the SPICE simulation of the VCO. The result proves that the full E-HEMT logic technology can be applied to the VCO. And compared with the HEMT DCFL technology, the complexity of our fabrication process is reduced and the reliability is improved.
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| 关 键 词： | 高电子迁移率晶体管 电压控制环形振荡器 逻辑技术 增强型 InP HEMT器件 SPICE模拟 压控振荡器 |
| 收稿时间： | 2008-09-08 |
A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic |
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| Du Rui,Dai Yang,Chen Yanling and Yang Fuhua. A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic[J]. Chinese Journal of Semiconductors, 2009, 30(3): 035001-5 |
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| Authors: | Du Rui Dai Yang Chen Yanling Yang Fuhua |
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| Affiliation: | Research Center of Semiconductor Integration, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Research Center of Semiconductor Integration, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Research Center of Semiconductor Integration, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Research Center of Semiconductor Integration, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | A voltage-controlled ring oscillator (VCO) based on a full enhancement-mode InAlAs/InGaAs/InP high electron mobility transistor (HEMT) logic is proposed. An enhancement-mode HEMT (E-HEMT) is fabricated, whose threshold is demonstrated to be 10 mV. The model of the E-HEMT is established and used in the SPICE simulation of the VCO. The result proves that the full E-HEMT logic technology can be applied to the VCO. And compared with the HEMT DCFL technology, the complexity of our fabrication process is reduced and the reliability is improved. |
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| Keywords: | VCO E-HEMT InP |
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