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探讨电弧离子镀中“大颗粒”净化方法
引用本文:胡双丽.探讨电弧离子镀中“大颗粒”净化方法[J].真空,2012,49(4):72-74.
作者姓名:胡双丽
作者单位:中山凯旋真空技术工程有限公司,广东中山,528441
摘    要:传统电弧离子镀存在着大颗粒污染、沉积温度相对较高和易引发微弧击穿效应等诸多不足,制约其在精细薄膜、低温沉积和功能薄膜等方面的应用。本文简要介绍了电弧离子镀中大颗粒的形成机理,旨在探讨用磁场控制、脉冲电弧、磁过滤及脉冲偏压等方法来减少大微粒污染及其作用机理。

关 键 词:电弧离子镀  “大颗粒”污染  脉冲电弧源  磁过滤  脉冲偏压

Review on solutions of droplet contamination in arc ion plating
HU Shuang-li.Review on solutions of droplet contamination in arc ion plating[J].Vacuum,2012,49(4):72-74.
Authors:HU Shuang-li
Affiliation:HU Shuang-li (Zhongshan Kaixuan Vacuum Technology & Engineering Co.,LTD,Zhongshan 528441,China)
Abstract:The application of conventional arc ion plating in fine thin film,low temperature deposition,functional films has been restricted by problems such as droplet contamination,high deposition temperature and micro arc breakdown.This article briefly reviews the formation mechanism of the droplet contamination and explores the methods for reducing or eliminating the problem by approaches of magneticfield control,pulsed arc,magnetic filtering,pulsed bias and so on.
Keywords:arc ion plating  droplet contamination  pulsed arc  magnetic filtering  pulsed bias
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