Optical properties of silicon-doped (100) GaAs layers grown by molecular-beam epitaxy |
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Authors: | V. G. Mokerov Yu. V. Fedorov A. V. Guk G. B. Galiev V. A. Strakhov N. G. Yaremenko |
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Affiliation: | (1) Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 113907 Moscow, Russia |
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Abstract: | The photoluminescence spectra of (100) GaAs layers, both undoped and doped with silicon, is investigated at T=77 K. It is found that along with the B-band, which corresponds to interband radiative recombination, the spectra of doped layers also exhibit a so-called Si-band located near hν⋍1.4 eV. In multilayer δ-doped structures, an additional band appears in the region hν⋍1.47–1.48 eV, which is called here the δ-band. The dependence of the energy positions, intensities, and shapes of these photoluminescence bands on the doping dose N Si, laser excitation power, and temperature are investigated. It is shown that the Si-band is caused by optical transitions between the conduction band and a deep acceptor level (∼100 meV) connected with Si atoms on As sites. It is also established that the dependences of the shape and intensity of the δ-band on temperature and photoluminescence excitation power are identical to the corresponding dependences for the B-band. The behavior of the δ-band in the photoluminescence spectra is viewed as evidence of quantum-well effects in the δ-doped structures. Fiz. Tekh. Poluprovodn. 32, 1060–1063 (September 1998) |
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