Threshold behavior of the formation of nanometer islands in a Ge/Si(100) system in the presence of Sb |
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Authors: | G E Cirlin V G Dubrovskii A A Tonkikh N V Sibirev V M Ustinov P Werner |
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Affiliation: | (1) Institute for Analytical Instrumentation, Russian Academy of Sciences, Rizhskii pr. 26, St. Petersburg, 190103, Russia;(2) Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia;(3) Max-Planck Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Germany |
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Abstract: | Atomic-force microscopy is used to study the behavior of an array of Ge islands formed by molecular-beam epitaxy on an Si (100) surface in the presence of an antimony flux incident on the surface. It is shown that, as the Sb flux increases to a certain critical level, the surface density of the islands increases; however, if this critical level is exceeded, nucleation of the islands is suppressed and mesoscopic small-height clusters are observed on the surface. This effect is explained qualitatively in the context of a kinetic model of the islands’ formation in heteroepitaxial systems mismatched with respect to their lattice parameters. |
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