| 金属基NiCr-NiSi薄膜热电偶的制备及性能研究 |
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| 引用本文： | 姚飞,蒋洪川,张万里,刘兴钊,唐磊,于浩. 金属基NiCr-NiSi薄膜热电偶的制备及性能研究[J]. 电子元件与材料, 2010, 29(9) |
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| 作者姓名： | 姚飞 蒋洪川 张万里 刘兴钊 唐磊 于浩 |
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| 作者单位： | 电子科技大学,电子薄膜与集成器件国家重点实验室,四川,成都,610054;中国燃气涡轮研究院测控室,四川,江油,621700 |
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| 摘 要： | 采用电子束蒸发和磁控溅射法在Ni基超合金基片上制备NiCr-NiSi薄膜热电偶,薄膜热电偶依次由Ni基超合金基片、NiCrAlY过渡层、Al2O3热氧化层、氧化铝绝缘层、NiCr-NiSi薄膜热电偶层以及氧化铝保护层构成。对此薄膜热电偶样品的静态标定结果表明,所制备的金属基NiCr-NiSi薄膜热电偶在25～600℃内具有良好的线性度,Seebeck(塞贝克)系数达到37.5μV/K,略低于K型标准热电偶的塞贝克系数40.0μV/K。
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| 关 键 词： | NiCr-NiSi薄膜热电偶 静态标定 塞贝克系数 |
Fabrication and performances of NiCr-NiSi thin film thermocouples on metal substrates |
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| YAO Fei,JIANG Hongchuan,ZHANG Wanli,LIU Xingzhao,TANG Lei,YU Hao. Fabrication and performances of NiCr-NiSi thin film thermocouples on metal substrates[J]. Electronic Components & Materials, 2010, 29(9) |
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| Authors: | YAO Fei JIANG Hongchuan ZHANG Wanli LIU Xingzhao TANG Lei YU Hao |
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| Affiliation: | YAO Fei1,JIANG Hongchuan1,ZHANG Wanli1,LIU Xingzhao1,TANG Lei2,YU Hao2(1.State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China,2.Testing Department,Research Institute of Gas and Turbine of China,Jiangyou 621700,Sichuan Province,China) |
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| Abstract: | NiCr-NiSi thin film thermocouples were fabricated by the methods of electron beam evaporation and magnetron sputtering on the Ni-based superalloy substrates.The thermocuples were composed of Ni-based superalloy substrate,NiCrAlY buffer layer,thermal grown Al2O3 layer,sputtered Al2O3 insulated layer,NiCr-NiSi thin film thermocouple layer and sputtered Al2O3 protective layer,in turn.The results of the static calibration of the thin film thermocouple sample show that fabricated NiCr-NiSi thin film thermocouple... |
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| Keywords: | NiCr-NiSi thin film thermocouple static calibration Seebeck coefficient |
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