High-temperature oxidation of tantalum of different purity |
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Authors: | V. B. Voitovich V. A. Lavrenko V. M. Adejev E. I. Golovko |
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Affiliation: | (1) Institute for Problems of Materials Science of the Ukrainian Academy of Sciences, Krzhyzhanovskogo str. 3, 252142 Kiev, Ukraine |
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Abstract: | The kinetics, structural aspects, and phase morphologies were studied for tantalum oxidation in air from 600 to 1000°C for samples of different purity (99.15%, 99.76%, and 99.95% Ta). Regardless of purity, tantalum oxidation in the temperature range of 600–800°C as a rule is governed by a linear rate law. From 900 to 1000°C the initial-stage oxidation is governed by the parabolic rate law, which changes to the linear rate law with time. TGA, XRD, SEM, and AES methods were used. The, effect of purity on tantalum oxidation was shown to be determined by the mechanism of intermediate-oxide formation. They are TaOz (Ta2O) at 600–800°C and TaO at 900–1000°C. The final product of oxidation was -Ta2O5. |
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Keywords: | oxidation kinetics tantalum oxide suboxide impurities diffusion |
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