制备工艺对掺铕的钨酸钙薄膜发光性能的影响

采用射频溅射法在硅片上沉积了Ca0.98WO4∶Eu0.02薄膜,利用正交试验研究了溅射时间、气压和功率对Ca0.98WO4∶Eu0.02薄膜的红光(615 nm)发光强度的影响。荧光分析表明,溅射法沉积的Ca0.98WO4∶Eu0.02薄膜需在700⁸00℃热处理后才能强烈地表现出Eu3+离子的特征发光行为;正交试验说明,溅射气压、时间和功率对薄膜的发光强度都有重要影响,溅射气压的影响尤为重要。研究还表明,为提高发光强度,溅射气压宜控制在1.0 Pa左右,溅射时间在160 min。

Effects of Preparation Techniques on the Luminescence of Europium-doped Calcium Tungstate Thin Films

Ca0.98WO4∶Eu0.02 thin films were deposited on silicon substrates by radio frequency（RF）sputtering techniques. The influences of sputtering pressure, times and powder on the intensities of the red emission of samples were investigated through orthogonal experiments. Fluorescence analyses reveal that Ca 0.98WO4∶Eu0.02 thin films should be annealed at the temperature range from 700 ℃ to 800 ℃; otherwise, no sharp and strong red emission （situated at 615 nm）corresponding to Eu3＋ions could be observed. Orthogonal experiments show that the intensities of the luminescence of these samples will be influenced greatly by sputtering pressure, times and powder, especially sputtering pressure. Researches also reveal that the sputtering pressure should be controlled near 1.0 Pa and the deposition time should be about 160 min to improve the luminescence intensities of Ca 0.98WO4∶Eu0.02 thin films.