Impurity diffusion from uncoated foreign substrates during high temperature CVD for thin-film Si solar cells |
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Authors: | G. Beaucarne S. Bourdais A. Slaoui J. Poortmans |
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Affiliation: | a IMEC vzw., Kapeldreef 75, B-3001 Leuven, Belgium;b Laboratoire CNRS-PHASE, 23 rue du Loess, F-67037 Strasbourg, France |
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Abstract: | In this paper, we study the diffusion of impurities from three types of foreign substrates (graphite, alumina and mullite) during thermal chemical vapour deposition (CVD) of a polycrystalline Si film. For this we use a rapid thermal CVD (RTCVD) system and characterization techniques such as secondary ion mass spectroscopy (SIMS) and deep level transient spectroscopy (DLTS). Results show that, in the case of materials like graphite, metallic contaminants can freely outdiffuse into the deposited layer and the environment. In contrast, the ceramic substrates release only a very limited amount of contaminants during the CVD process, making the need of a diffusion barrier much less severe. |
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Keywords: | Thin-film crystalline Si solar cells Impurity diffusion Diffusion barrier Ceramic substrates |
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