Preparation and investigation of VOx thin films of n- and p-types |
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Authors: | Alexander Axelevitch Boris Gorenstein Gady Golan |
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Affiliation: | Department of Electrical and Electronics Engineering, Holon Institute of Technology, Holon 58102, Israel |
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Abstract: | In this work we present first results on the synthesis of vanadium oxide semi-transparent conducting thin films of p- and n-types. The films were deposited by thermal evaporation method in vacuum, on: silicon, glass, sapphire, and gold substrates. Temperature of substrate during deposition was set around 250 °C. As deposited films were of a p-type of conductivity. Thermal annealing at 420 °C of as-deposited films in air at atmospheric pressure resulted in a change in the conductivity type.Optical, electrical and thermal properties of the deposited films were studied. The topography of the films was studied using AFM microscope. P-N structures were created using VOx films on silicon and glass substrates. Electrical measurements had shown a non-linear behaviour of the samples. |
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Keywords: | Vanadium oxide p-type conductivity Phases transition |
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