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β-FeSi2 growth on Cu-mediated Si substrate and enhancement of photoluminescence |
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| Authors: | Kensuke Akiyama Masaru Itakura Hiroshi Funakubo |
| Affiliation: | a Kanagawa Industrial Technology Center, 705-1 Shimoimaizumi, Ebina-shi, Kanagawa 243-0435, Japan b Department of Applied Science for Electronics and Materials, Kyushu University, 6-1 Kasuga, Fukuoka 816-8580, Japan c Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 228-8505, Japan d Department of Energy Science and Technology, Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan |
| Abstract: | We have investigated the growth of β-FeSi2 on Cu-mediated (100) Si substrates and photoluminescence (PL) behavior. X-ray diffraction, scanning electron microscopy (SEM) and transmission electron microscopy (TEM) observations revealed that the mediated surface became amorphous-like Si layers due to Cu atomic diffusion from the surface to the inside of Si and recrystallized during β-FeSi2 deposition, and that the recrystallization may contribute to the improvement of crystallinity of β-FeSi2 and the hetero-interface. We have observed pronounced enhancement of PL intensity from β-FeSi2 grown on the Cu-mediated Si substrate. This implies that non-radiative recombination centers may be decreased by the improvement of hetero-interface. |
| Keywords: | β-FeSi2 Growth mechanism Luminescence |
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