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Initial study on the structure and optical properties of Zn1−xFexO films |
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| Authors: | ZC Chen LJ Zhuge XM Wu YD Meng |
| Affiliation: | a Department of Physics, Suzhou University, Suzhou 215006, People's Republic of China b The Key Laboratory of Thin Films of Jiangsu, Suzhou university, Suzhou 215006, People's Republic of China c Analysis and Testing Center, Suzhou University, Suzhou 215006, People's Republic of China d Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031, People's Republic of China |
| Abstract: | Zn1−xFexO (x = 0, 0.052, 0.103, 0.157 and 0.212) films were prepared by the radio-frequency magnetron sputtering technique on Si (111) substrates and the microstructure of which was characterized by X-ray diffraction, X-ray photoelectron spectroscopy, and scanning electron microscopy. The samples had a preferential c-axis orientation and the position of (002) diffraction peak shifted to the lower degree side with increasing Fe component. In order to investigate the optical transmittance properties of Zn1−xFexO films, we prepared the films on Al2O3 (001) substrates simultaneity and the UV-VIS optical transmittance spectra showed that the band gap energy of Zn1−xFexO films decreased with increase of Fe concentration. Photoluminescence spectra of the samples were observed at room temperature. |
| Keywords: | ZnO films Fe-doped Optical transmission Photoluminescence Magnetron sputtering |
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