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Photoluminescence enhancement by isolating β-FeSi2 layers from defective layers |
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| Authors: | Yu-ichiro Ando Kensuke Akiyama Yoshihito Maeda |
| Affiliation: | a Department of Energy Science and Technology, Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan b Kanagawa Industrial Technology Center, Ebina, Kanagawa 243-0435, Japan c Department of Engineering, Osaka University, Suita, Osaka 565-0871, Japan |
| Abstract: | We have investigated an optimal annealing process in order to enhance 1.55 μm light emission from semiconducting β-FeSi2 and found that two steps annealing at 600 °C and 800 °C is effective to its enhancement. Rutherford backscattering spectroscopy and SEM observations revealed that pronounced surface segregation of Fe atoms during annealing at 600 °C caused surface precipitate of β-FeSi2. The enhancement of light emission is attributed spatial isolation of the surface β-FeSi2 (light emitting layer) from damaged and defective layers with nonradiative recombination centers. |
| Keywords: | Semiconducting silicide β-FeSi2 Light emission Surface segregation |
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