a Center for Materials Research, Norfolk State University, 700 Park Avenue, Norfolk, VA 23504, USA b Department of Physics, Fisk University, 1000, 17 Avenue North, Nashville, TN 37208, USA
Abstract:
AgInSe2 (AIS) films were grown on n-type Si substrates by the ultra-high-vacuum pulsed laser deposition technique from the AIS target synthesized from high-purity materials. The X-ray diffraction and microscopic studies of the films show that films are textured having terrace-like surface morphology. The optical studies of the films show that the optical band gap is about 1.24 eV. The electrical conductivity of AgInSe2/Si films shows excellent diode characteristics. The photoconductivity of the AgInSe2/Si device shows photocurrent of 2.8 mA at a bias-voltage of − 1 V with an open circuit voltage of 0.15 V. This shows that AIS films are very good absorber material for solar cell technology.