Improved microstructural properties of a ZnO thin film using a buffer layer in-situ annealed in argon ambient |
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Authors: | Dong Jun Park Tae Eun Park Hyung Koun Cho |
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Affiliation: | a Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, South Korea b Department of Materials Science and Engineering, Dong-A University, 840 Hadan-dong, Saha-gu, Busan, 604-714, South Korea c School of Advanced Materials Science and Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon, Gyeonggi-do, 440-746, South Korea |
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Abstract: | ZnO films with improved crystallinity were grown on a Si (111) substrate by a two-step growth process using low-temperature ZnO buffer layers. The effect of the ambient gas during the temperature elevation and the in-situ thermal annealing after the growth of the low-temperature buffer layers on the optical and structural properties of the films was investigated by X-ray diffraction (XRD), photoluminescence, and transmission electron microscopy. The use of argon as the ambient gas during the thermal treatment of the buffer layer leads to the enhancement of the (0002) diffraction peak intensity at 2θ ∼ 34.4° and the reduction of the full width at half maximum value in the XRD rocking curve, which means that well-defined and c-axis oriented ZnO film was obtained. The relationship between the thickness of the SiO2 layer between the ZnO buffer layers and Si substrates and the structural and optical properties of the ZnO films is discussed. |
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Keywords: | 68 37 Lp 68 55 Jk 61 72 Nn 61 43 Bn |
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