Growth and characterization of group-III impurity-doped semiconducting BaSi2 films grown by molecular beam epitaxy |
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| Authors: | M. Kobayashi T. Suemasu |
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| Affiliation: | a Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan
b PRESTO, JST, 4-1-8 Honcho Kawaguchi, Saitama 332-0012, Japan |
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| Abstract: | Ga- or In-doped BaSi2 films were grown on Si(111) by molecular beam epitaxy (MBE). The Ga-doped BaSi2 showed n-type conductivity. The electron concentration and resistivity of the Ga-doped BaSi2 depended on the Ga temperature; however, the electron concentration and resistivity could not be controlled properly. In contrast, the In-doped BaSi2 showed p-type conductivity and its hole concentration was controlled in the range between 1016 and 1017 cm− 3 at RT. |
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| Keywords: | BaSi2 Molecular beam epitaxy |
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