Subsurface structures in initial stage of FeSi2 growth studied by high-resolution Rutherford backscattering spectroscopy |
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Authors: | Motofumi Suzuki Kohei Kinoshita Shinji Jomori Hidehiko Harada Kaoru Nakajima Kenji Kimura |
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Affiliation: | Department of Micro Engineering, Kyoto University, Kyoto 606-8501, Japan |
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Abstract: | The initial stage of iron silicide formation is investigated by high-resolution Rutherford backscattering spectroscopy. During the Fe deposition on Si(001) at 470 °C, the formation of FeSi2 is confirmed by the surface peak analysis. Initially, FeSi2 grows epitaxially so that one of the major crystallographic axes is parallel to the <111> axis of the Si substrate. With increasing Fe deposition, the deviation between the major crystallographic axis of the silicide region and Si<111> increases although the electron diffraction pattern is independent of the amount of Fe deposition. Therefore, the subsurface crystallographic structure of iron silicide is transformed from a cubic-like to a low-symmetry structure. |
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Keywords: | Iron silicide Reactive deposition epitaxy Rutherford backscattering spectroscopy Ion channeling |
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