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Subsurface structures in initial stage of FeSi2 growth studied by high-resolution Rutherford backscattering spectroscopy
Authors:Motofumi Suzuki  Kohei Kinoshita  Shinji Jomori  Hidehiko Harada  Kaoru Nakajima  Kenji Kimura
Affiliation:Department of Micro Engineering, Kyoto University, Kyoto 606-8501, Japan
Abstract:The initial stage of iron silicide formation is investigated by high-resolution Rutherford backscattering spectroscopy. During the Fe deposition on Si(001) at 470 °C, the formation of FeSi2 is confirmed by the surface peak analysis. Initially, FeSi2 grows epitaxially so that one of the major crystallographic axes is parallel to the <111> axis of the Si substrate. With increasing Fe deposition, the deviation between the major crystallographic axis of the silicide region and Si<111> increases although the electron diffraction pattern is independent of the amount of Fe deposition. Therefore, the subsurface crystallographic structure of iron silicide is transformed from a cubic-like to a low-symmetry structure.
Keywords:Iron silicide   Reactive deposition epitaxy   Rutherford backscattering spectroscopy   Ion channeling
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