A study of the temperature dependence of adsorption and silicidation kinetics at the Mg/Si(111) interface |
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| Authors: | K.N. Galkin Mahesh Kumar S.M. Shivaprasad N.G. Galkin |
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| Affiliation: | a Institute for Automation and Control Processes Far Eastern Branch of Russian Academy of Sciences, 5, Radio Street, 690041, Vladivostok, Russia
b Surface Physics and Nanostructures Group, National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi, India |
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| Abstract: | The adsorption studies of magnesium on Si(111) substrate have been performed using AES, LEED and EELS at various substrate temperatures. It is observed that the sticking coefficient of magnesium on the silicide surface is close to zero for temperatures greater than 100 °C. It has been shown that the magnesium silicide grows as continuous films on Si substrate at temperature 100-140 °C, while for temperatures higher than 170 °C the magnesium silicide grows in the form of islands. |
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| Keywords: | Magnesium Silicon Magnesium silicide Adsorption Electron energy loss spectroscopy |
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