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The effect of nitrogen on the properties of zinc nitride thin films and their conversion into p-ZnO:N films |
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| Authors: | V Kambilafka S Dounis M Androulidaki V Šály P Prokein |
| Affiliation: | a Physics Department, University of Crete, P.O. Box 2208, 71003 Heraklion, Crete, Greece b Materials Science and Technology Department, University of Crete, P.O. Box 2208, 71003 Heraklion, Crete, Greece c Microelectronics Research Group, Institute of Electronic Structure and Laser, Foundation for Research and Technology-FORTH-Hellas, P.O. Box 1527, Heraklion 71110, Crete, Greece d Slovak University of Technology, Faculty of Electrical Engineering and Information Technology, Ilkovicova 3, SK-812 19 Bratislava, Slovak Republic |
| Abstract: | Zinc nitride thin films were deposited by magnetron sputtering using ZnN target in plasma containing either N2 or Ar gases. The rf-power was 100 W and the pressure was 5 mTorr. The properties of the films were examined with thermal treatments up to 550 °C in N2 and O2 environments. Films deposited in Ar plasma were opaque and conductive (ρ ∼ 10− 1 to 10− 2 Ω cm, ND ∼ 1018 to 1020 cm− 3) due to excess of Zn in the structure. After annealing at 400 °C, the films became more stoichiometric, Zn3N2, and transparent, but further annealing up to 550 °C deteriorated the electrical properties. Films deposited in N2 plasma were transparent but very resistive even after annealing. Both types of films were converted into p-type ZnO upon oxidation at 400 °C. All thermally treated zinc nitride films exhibited a shoulder in transmittance at around 345 nm which was more profound for the Ar-deposited films and particularly for the oxidized films. Zinc nitride has been found to be a wide band gap material which makes it a potential candidate for transparent optoelectronic devices. |
| Keywords: | ZnO ZnN Sputtering Optical properties Annealing OES Oxidation |
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