Investigation of thermal stability of Mo thin-films as the buffer layer and various Cu metallization as interconnection materials for thin film transistor-liquid crystal display applications

Cu/Mo/Si multi-layer structures were fabricated to investigate diffusion behaviors and thermal stability between Cu and Mo. Physical vapor deposition (PVD), chemical vapor deposition, electroplating and electrolessplating were used to grow 100 nm thick Cu films as interconnection materials, and radio-frequency sputtering system was introduced to grow 37.5 nm thick Mo films as a buffer layer. All Cu/Mo/Si multi-layer specimens were annealed at 350 to 700 °C for 30 min. When the annealing temperature was over 600 °C, the Cu diffused through Mo into Si, and the Cu₃Si phase and Mo-Si intermetallic compounds formed at the Mo/Si interface. The diffusion mechanism is the grain boundary diffusion. The results indicate that Cu film deposited by PVD had best crystallinity, lower roughness, large adhesive energy and resistivity. The values of the resistivity, diffusion activity energy and large adhesive energy are 5.47 μΩ-cm, 0.948 eV and 2.46 N/m, respectively.