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Deposition and characterization of reactive magnetron sputtered aluminum nitride thin films for film bulk acoustic wave resonator
Authors:Kuan-Hsun Chiu  Jiann-Heng Chen  Ruey-Shing Huang
Affiliation:a Institute of Electronics Engineering, National Tsing Hua University, 101, Section 2 Kuang Fu Road Hsinchu, 300, Taiwan
b Department of Electrical Engineering, National Chi Nan University, University Rd. Puli, Nantou Hsien, Nantou, 545, Taiwan
c Asia Pacific Microsystems, Inc., No2. R&D Rd. VI, Science-based Industrial Park Hsinchu, 300, Taiwan
Abstract:This work studies the relationship between the deposition process parameters and the properties of sputtered c-axis-oriented aluminum nitride (AlN) thin films. AlN films were deposited on a Pt electrode by reactive magnetron sputtering under various deposition conditions. The films were characterized by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM). A polycrystalline AlN film with highly c-axis-preferred orientation was achieved. The XRD rocking curve was 2.7°. The FESEM photographs also show that the AlN film has a dense hexagonal surface texture with uniform grain size and a highly ordered column structure.
Keywords:Aluminum nitride  Radio frequency sputter
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