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Chemical vapor deposition of amorphous ruthenium-phosphorus alloy films |
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| Authors: | Jinhong Shin Wyatt A Winkenwerder Kyriacos Agapiou Gyeong S Hwang |
| Affiliation: | a Texas Materials Institute, University of Texas at Austin, Austin, TX 78750, USA b Department of Chemistry and Biochemistry, University of Texas at Austin, Austin, TX 78712, USA c Department of Chemical Engineering, University of Texas at Austin, Austin, TX 78712, USA |
| Abstract: | Chemical vapor deposition growth of amorphous ruthenium-phosphorus films on SiO2 containing ∼ 15% phosphorus is reported. cis-Ruthenium(II)dihydridotetrakis-(trimethylphosphine), cis-RuH2(PMe3)4 (Me = CH3) was used at growth temperatures ranging from 525 to 575 K. Both Ru and P are zero-valent. The films are metastable, becoming increasingly more polycrystalline upon annealing to 775 and 975 K. Surface studies illustrate that demethylation is quite efficient near 560 K. Precursor adsorption at 135 K or 210 K and heating reveal the precursor undergoes a complex decomposition process in which the hydride and trimethylphosphine ligands are lost at temperatures as low at 280 K. Phosphorus and its manner of incorporation appear responsible for the amorphous-like character. Molecular dynamics simulations are presented to suggest the local structure in the films and the causes for phosphorus stabilizing the amorphous phase. |
| Keywords: | Amorphous films Ruthenium alloy Chemical vapor deposition Ab initio molecular dynamics simulation |
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