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On the processing-structure-property relationship of ITO layers deposited on crystalline and amorphous Si |
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| Authors: | S Diplas A Ulyashin AE Gunnaes D Wright A Olsen |
| Affiliation: | a University of Oslo, Centre for Material Science and Nanotechnology, P.O. Box 1126, Blindern, NO-0318 Oslo, Norway b Section for Renewable Energy, Institute for Energy Technology, P.O. Box 40, NO-2027 Kjeller, Norway c University of Oslo, Department of Physics, P.O Box 1048, Blindern, Oslo, Norway d University of Oslo, Department of Chemistry, P.O Box 1033, Blindern, Oslo, Norway e University of Surrey, The Surface Analysis Laboratory, School of Engineering, Guildford, Surrey, GU2 7XH, UK |
| Abstract: | Indium-tin-oxide (ITO) antireflection coatings were deposited on crystalline Si (c-Si), amorphous hydrogenated Si (a-Si:H) and glass substrates at room temperature (RT), 160 °C and 230 °C by magnetron sputtering. The films were characterised using atomic force microscopy, transmission electron microscopy, angle resolved X-ray photoelectron spectroscopy, combined with resistance and transmittance measurements. The conductivity and refractive index as well as the morphology of the ITO films showed a significant dependence on the processing conditions. The films deposited on the two different Si substrates at higher temperatures have rougher surfaces compared to the RT ones due to the development of crystallinity and growth of columnar grains. |
| Keywords: | ITO Magnetron sputtering AFM XPS TEM |
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