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Influence of the reactive N2 gas flow on the properties of rf-sputtered ZnO thin films |
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| Authors: | Jinzhong Wang Vincent Sallet Ana M. Botelho do Rego Rodrigo Martins |
| Affiliation: | a Department of Materials Science/CENIMAT-CEMOP, Faculty of Science and Technology, New University of Lisbon, 2829-516 Caparica, Portugal b Laboratoire de Physique des Solides et de Cristallogenèse, C.N.R.S., 1 Place Aristide Briand, 92195 MEUDON CEDEX, France c Centro de Química-Física Molecular, Complexo Interdisciplinar, IST 1049-001 Lisboa, Portugal |
| Abstract: | Nitrogen (N)-doped ZnO thin films were RF sputtered with different N2 volume (ranging from 10% to 100%) on sapphire (001) substrates. The influence of N2 vol.% on the properties of ZnO films was analyzed by various characterization techniques. The X-ray diffraction studies showed that the films grow along the preferential (002) crystallographic plane and the crystallinity varied with varying N2 vol.%. The films sputtered with 25 vol.% N2 showed better crystallinity. The transmittance was decreased with increasing N2 volume until 25% and was almost constant above 25%. A maximum optical band gap (2.08 eV) obtained for 10 vol.% N2 decreased with increasing N2 volume to reach a minimum of 1.53 eV at 100%. The compositional analysis confirmed the incorporation of N into ZnO films, and its concentration increased with increasing N2 volume to reach a maximum of ∼ 3.7 × 1021 atom/cm3 at 75% but then decreased slightly to 3.42 × 1021 atoms/cm3. The sign of Hall coefficient confirmed that the films sputtered with ≤ 25 vol.% N2 possess p-type conductivity which changes to n-type for > 25 vol.% N2. |
| Keywords: | ZnO thin films Sputtering XPS SIMS Hall measurement |
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