Interconnect and contact for nanoelectronics: Metallic TaSi2 nanowires

TaSi₂ nanowires have been synthesized on Si substrate by annealing FeSi₂ thin film and NiSi₂ films at 950 °C in an ambient containing Ta vapor whose length would be grown up to 13 μm. The metallic TaSi₂ nanowires exhibit excellent electrical properties with remarkable high failure current density of 3 × 10⁸ A cm^− 2. In addition, the growth mechanism is addressed in detail, The TaSi₂ nanowires are formed in three steps: segregation of Si atoms from the FeSi₂ thin film and NiSi₂ films underlayer to form Si base, growth of TaSi₂ nanodots on Si base, and elongation of TaSi₂ nanowire along the growth direction. This simple approach promises future applications in nanoelectronics and nano-optoelectronics.