| Abstract: | The design of a CMOS clamped‐clamped beam resonator along with a full custom integrated differential amplifier, monolithically fabricated with a commercial 0.35 μm CMOS technology, is presented. The implemented amplifier, which minimizes the negative effect of the parasitic capacitance, enhances the electrical MEMS characterization, obtaining a 48 × 108 resonant frequency‐quality factor product (Q×fres) in air conditions, which is quite competitive in comparison with existing CMOS‐MEMS resonators. |
