| S掺杂ZnO薄膜光电特性的研究 |
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| 引用本文： | 李建国,蒋向东,王继珉,向斌宾. S掺杂ZnO薄膜光电特性的研究[J]. 材料导报, 2012, 26(6): 20-23 |
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| 作者姓名： | 李建国 蒋向东 王继珉 向斌宾 |
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| 作者单位： | 电子科技大学光电信息学院,成都,610054 |
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| 基金项目： | 四川省应用基础项目(07JY029-087) |
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| 摘 要： | 采用射频磁控溅射法,在玻璃基片上生长了ZnO:S薄膜。XRD测试表明所制薄膜为六角纤锌矿结构,具有明显的(002)衍射峰。室温下的透射光谱测量结果表明,随着S掺入量的增加,ZnO:S合金薄膜的吸收边向长波长方向移动,但在可见光部分有较高的透过率。在此基础上计算了各样品的禁带宽度,结果表明,在S掺入量小于8%的范围内,随着S掺入量的增加,禁带宽度减小。样品紫外光电导特性明显,在波长365nm、功率4000μW/cm2紫外光源照射下,紫外光与可见光所对应光电流响应之比可达3。
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| 关 键 词： | ZnO 禁带宽度 ZnO S薄膜 |
Optical and Electrical Properties of S Doped ZnO Thin Films |
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| LI Jianguo , JIANG Xiangdong , WANG Jimin , XIANG Binbin. Optical and Electrical Properties of S Doped ZnO Thin Films[J]. Materials Review, 2012, 26(6): 20-23 |
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| Authors: | LI Jianguo JIANG Xiangdong WANG Jimin XIANG Binbin |
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| Affiliation: | (School of Optoelectronic Information,University of Electronic Science and Technology of China,Chengdu 610054) |
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| Abstract: | S-doped ZnO(ZnO:S) film was fabricated by radio frequency magnetron sputtering.X-ray diffraction indicated the ZnO:S films with the(002) preference reflection of hexagonal wurtzite structure when S content changed from 0 to 7.99%.Transmission spetrum at room temperature showed an intense ultraviolet absorbtion which shifted to low-energy side with increased S content.But these films with a high transparency in the visible wavelength.The calculation of Eg showed energy gap shifted to low-energy side when S was incorporated.ZnO:S films showed remarkable photoconductance.Under a wavelength of 365nm UV light and a power of 4000μW/cm2,the ratio of ultraviolet and visible light photocurrent up to 3. |
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| Keywords: | ZnO band gap ZnO:S films |
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