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溅射气压对HfO_2薄膜结构和光学性能的影响
引用本文:马紫微,苏玉荣,谢毅柱,赵海廷,刘利新,李健,谢二庆. 溅射气压对HfO_2薄膜结构和光学性能的影响[J]. 材料导报, 2012, 26(10): 16-18,22
作者姓名:马紫微  苏玉荣  谢毅柱  赵海廷  刘利新  李健  谢二庆
作者单位:1. 兰州大学物理科学与技术学院电子材料研究所,兰州730000;运城学院物理与电子工程系,运城044000
2. 兰州大学物理科学与技术学院电子材料研究所,兰州,730000
基金项目:国家自然科学基金(10776010);表面工程技术国家级重点实验室基金(9140C5401010801)
摘    要:HfO2薄膜的结构和光学性能与反应溅射时使用的气压有很强的依赖关系。薄膜的晶粒生长取向、生长速率和折射率明显受溅射气压的影响。所有的薄膜均为单斜相,晶粒尺寸在纳米量级。薄膜的折射率在1.92~2.08范围内变化,透过率大于85%。结果表明,这些HfO2薄膜很适宜用作增透膜或者高反膜。此外,通过Tauc公式推出光学带隙在5.150~5.433eV范围内变化,表明样品是良好的绝缘体。

关 键 词:HfO薄膜  溅射法  光学性能  光学带隙

Influence of Gas Pressure on the Structural and Optical Properties of Sputtered Hafnium Oxide Thin Films
MA Ziwei , SU Yurong , XIE Yizhu , ZHAO Haiting , LIU Lixin , LI Jian , XIE Erqing. Influence of Gas Pressure on the Structural and Optical Properties of Sputtered Hafnium Oxide Thin Films[J]. Materials Review, 2012, 26(10): 16-18,22
Authors:MA Ziwei    SU Yurong    XIE Yizhu    ZHAO Haiting    LIU Lixin    LI Jian    XIE Erqing
Affiliation:1 (1 Institute of Eletronic Materials,School of Physical Science and Technology,Lanzhou University,Lanzhou 730000; 2 Departments of Physics and Electronic Engineering,Yuncheng University,Yuncheng 044000)
Abstract:The structural and optical properties of hafnium oxide(HfO2) films dependent on reactive sputtering pressure were studied.The crystalline orientations,the growth rates and the refractive index were obviously affected by the sputtering pressure.All films were monoclinic phase and the grain sizes were in the nanometer scale.The refractive index of the films were in the range of 1.92~2.08 and the transmittances of the films were above 85%.Those results indicate that HfO2 films are suitable for antireflective(AR) or highly reflective(HR) coatings.In addition,under the different sputtering pressure,the optical band gaps of the films calculated using Tauc formula ranged from 5.150eV to 5.433eV,which were corresponded to a good insulator.
Keywords:hafnium oxide film  sputtering  optical properties  optical band gap
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