| 衬底温度对Sn掺杂ZnO薄膜结构、电学和光学性能的影响 |
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| 引用本文： | 谌夏,方亮,吴芳,阮海波,魏文猴,黄秋柳. 衬底温度对Sn掺杂ZnO薄膜结构、电学和光学性能的影响[J]. 材料导报, 2012, 26(10): 33-35,57 |
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| 作者姓名： | 谌夏 方亮 吴芳 阮海波 魏文猴 黄秋柳 |
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| 作者单位： | 1. 重庆理工大学材料学院,重庆,401331
2. 重庆大学物理学院,重庆,400044 |
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| 基金项目： | 国家自然科学基金(NCFC11074314;50942001);重庆大学研究生创新基金(CDJXS10102207);重庆大学“211工程”三期创新人才培养计划建设项目S-09109;重庆大学大型仪器设备开放基金(2010063072;2010121556) |
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| 摘 要： | 采用射频磁控溅射技术在石英衬底上制备了掺杂浓度为0.5％(原子分数)的ZnO∶Sn(TZO)薄膜,研究了不同衬底温度下薄膜的结构、形貌、电学和光学的性能.研究发现,TZO薄膜沿着C轴择优生长,在400℃时结晶度最好,最低电阻率为2.619×10-2Ω·cm,在可见光范围内具有较好的透光率.
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| 关 键 词： | Sn掺杂ZnO薄膜 射频磁控溅射 光学性质 电学性质 |
Effect of Substrate Temperature on the Structure, Electrical and Optical Properties of Sn-doped ZnO Thin Films |
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| CHEN Xia , FANG Liang , WU Fang , RUAN Haibo , WEI Wenhou , HUANG Qiuliu. Effect of Substrate Temperature on the Structure, Electrical and Optical Properties of Sn-doped ZnO Thin Films[J]. Materials Review, 2012, 26(10): 33-35,57 |
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| Authors: | CHEN Xia FANG Liang WU Fang RUAN Haibo WEI Wenhou HUANG Qiuliu |
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| Affiliation: | 1 College of Materials Science and Engineering,Chongqing University of Technology,Chongqing 401331; 2 College of Physics,Chongqing University,Chongqing 400044) |
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| Abstract: | Tin doped zinc oxide(TZO) thin films were prepared by radio frequency magnetron sputtering on quartz glass substrates.The concentration of Sn element in the powder target was 0.5% in atomic ratio.The effect of substrate temperature on the structural,surface morphologies,electrical and optical properties of the ZnO∶Sn thin films was investigated.It was found that the as-deposited film is C-axis perpendicular to the substrate.The lowest resistivity(2.619×10-2Ω·cm),and the best crystal quality were obtained at 400℃.In the visible region,the films were with good transmittance. |
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| Keywords: | tin doped zinc oxide radio frequency magnetron sputtering optical properties electrical properties |
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