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AZO薄膜制备工艺及其性能研究
引用本文:黄稳,余洲,张勇,刘连,黄涛,闫勇,赵勇. AZO薄膜制备工艺及其性能研究[J]. 材料导报, 2012, 26(1): 35-39
作者姓名:黄稳  余洲  张勇  刘连  黄涛  闫勇  赵勇
作者单位:1. 西南交通大学超导研究开发中心材料先进技术教育部重点实验室,成都,610031
2. 西南交通大学超导研究开发中心材料先进技术教育部重点实验室,成都610031;新南威尔士大学材料科学与工程学院,悉尼2052
基金项目:中央高校基本科研业务费专项资金,国际自然科学基金,国家高科技项目,高等学校博士点专项科研基金,长江学者与创新团队计划
摘    要:综述了掺铝氧化锌(AZO)薄膜制备方法与光电特性,重点阐述了磁控溅射法制备工艺参数如衬底温度、溅射功率、气体压强、溅射时间、衬底和靶间距、负偏压等对AZO薄膜结构、光电性能的影响,并指出目前AZO薄膜的研究关键以及所面临的挑战,展望了未来的研究方向。

关 键 词:AZO  结构特性  光电特性

Research on Preparation Technology and Properties of AZO Thin Films
HUANG Wen , YU Zhou , ZHANG Yong , LIU Lian , HUANG Tao , YAN Yong , ZHAO Yong. Research on Preparation Technology and Properties of AZO Thin Films[J]. Materials Review, 2012, 26(1): 35-39
Authors:HUANG Wen    YU Zhou    ZHANG Yong    LIU Lian    HUANG Tao    YAN Yong    ZHAO Yong
Affiliation:1,2 (1 Superconductivity R&D Center(SRDC),Key Laboratory of Advanced Technology of Materials of Ministry of Education,Southwest Jiaotong University,Chengdu 610031;2 School of Materials Science and Engineering, University of New South Wales,Sydney 2052)
Abstract:The preparation technology and opto-electrical properties of AZO thin films are reviewed.The in-fluences of magnetron sputtering parameters such as substrate temperature,sputtering power,gas pressure,sputtering time,distance between substrate and target,negative bias and so on on the structural and opto-electrical properties of AZO thin films are summarized.Moreover,the key problems and the challenges of the present researches are discussed and the possible future developments are given.
Keywords:AZO  structural properties  opto-electrical properties
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